Power Device

Silicon (Si), silicon carbide (SiC), and gallium-nitride (GaN) power chips regulate electrical voltages and current flows in diverse consumer products, industrial equipment, and the latest Electric Vehicles (EV).

Fabrication processes must be monitored to ensure meeting the highest quality and reliability standards for Power Device types including MOSFET, Power MOS, IGBT, BIPOLAR-CMOS-DMOS (BCD), Super Junctions, Diodes, and Rectifiers.

The n&k Technology advantage of hardware, software, and applications expertise results in unparalleled cost-effective metrology for High Volume Manufacturing (HVM) fabs worldwide.

Metrology for Essential Process Steps

• Angstrom-resolution control for Deposition, Diffusion, Epitaxy, & Lithography
• Etched structures for Poly & Oxide Recess, Contacts, Trench Isolation (STI & DTI)
• High Aspect-Ratio (>20:1) trenches and vias, along with sidewall angle monitoring
• Engineered substrate layers of SOI and GaN-On-Silicon (GOS) for wafers