The following papers by Dr. Forouhi and Dr. Bloomer represent the core technology of
n&k Technology Inc.
Optical Properties of Crystalline Semiconductors and Dielectrics
Source: Physical Review B, Vol. 38, Np. 3, 1865 (1988)
Authors: A.R. Forouhi, I. Bloomer
Abstract: Second paper which introduces the Forouhi-Bloomer Dispersion Equations. Shows that
there is excellent agreement with the FB Model and the characterization for crystalline Si, Ge,
GaP, GaAs, GaSb, InP, InAs, InSb, SiC, cubic C, and a-SiO2, over a wide range of energies.
Optical Dispersion Relations for Amorphous Semiconductors and Amorphous Dielectrics
Source: Physical Review B, Vol. 34, No. 10, 7018 (1986)
Authors: A.R. Forouhi, I. Bloomer
Abstract: Original paper which introduces the Forouhi-Bloomer Dispersion Equations and the
excellent agreement with experimentally measured results of n and k for amorphous silicon,
hydrogenated amorphous silicon, amorphous silicon nitride and titanium dioxide.
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our publications, please submit
a request by:
e-mail: inforequest@nandk.com
phone: 408-513-3800
fax: 408-513-3850
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n&k Technology, Inc.
80 Las Colinas Lane
San Jose, CA 95119