Thin Film Only

DUV-Vis-NIR (Wavelength Range: 190nm – 1000nm) Thin Film Metrology Systems for Patterned and Unpatterned Films on Transparent and Opaque Substrates

The n&k Gemini-TF, Gemini-TF-M and Gemini-FPD are specifically designed for measurements of patterned and unpatterned films on transparent or opaque substrates. These tools are used extensively for solar cell, flat panel and photomask applications. The tools belonging to the Gemini-TF Series are based on unpolarized Reflectance (R) and unpolarized Transmittance (T) measurements, with a 50μm spot size for both R and T. R and T are simultaneously measured to determine film thickness and n and k spectra from 190nm – 1000nm

The Gemini-TF Series is our “next-generation” DUV-Vis-NIR Thin Film series for films on transparent and opaque substrates. This series was launched in 2011, superseding the previous generation 3700-RT, 1800-RT, and 1700-RT. Advancements in the optical design of the Gemini-TF Series provide a 50μm spot size for T in comparison to the 200μm spot size for T of previous generations.

• n, k, and thickness of Nitride layers deposited on Si substrates with various degrees of surface roughness
  • – The tools of the Gemini-TF series have the sensitivity to measure films on extremely rough Si substrates with less than a couple of tenths of a percent reflectance (<0.15% based of 0-100% scale)
• Determination of a roughness “figure of merit” for various degrees of roughness of Silicon substrates
• Determination of Eg (Energy Band Gap)
• Rapid Determination of thickness uniformity
• Degree of crystallinity of silicon films
• Determination of n, k, thickness, and Eg, of CIGS layers Determination of inhomogeneous films in CIGS solar stack such as CdS
• Films Comprising p-i-n Junction Solar Cell Stack
• Simultaneous determination of n, k, and thickness of Transparent Conductive Oxides (TCOs) on a transparent substrate
  • – ITO
  • – ATO
• Degree of conductivity of transparent conductive oxides (TCOs)

• Thin Films on Glass Substrate
  • – c-Si, Poly-Si, a-Si, SiO2, SiN, Mo, Ag,
    ITO, ATO, Organic Polymers
• Color Filters
  • – Primary, Secondary colors, multiple stacks
• All films in an LCOS stack, e.g.:
  • – ARC/SiO2/ITO/ Polyimide/AIR/Polyimide/SiN/SiO2/Al/Si-Substrate
  • – Empty Cell Gap Measurement for LCOS
• Encapsulated Thin Films between Top and Bottom Glass of OLEDs
  • – ITO Anode Laye
  • – Polymer Buffer Layer
  • – Polymer Light Emitting Layer
  • – Al Cathode Layer

• Measurements of a large range of thin film structures to cover current and future applications of photomasks
• Measurement of Absorber, Buffer, Cap, plus Super-Structure (alternating Mo/a-Si) layers of EUV masks
• Film Thickness and n and k spectra (190nm – 1000nm) of all the layers of phase shift masks including Resist, ARC, CrOx, Cr, CrN, ArF, KrF, MoSi.
• Ability to create analysis models of film stacks with 100 layers or more
• Ability to characterize complex materials from a multilayer film stack
• Thickness measurement sensitivity for layers <5nm
• Phase-shift of phase shift masks

The table below presents the differences between the tools in the Gemini Series: