Semiconductor

DUV-Vis-NIR (Wavelength Range: 190nm – 1000nm) Scatterometers/Thin Film Metrology Systems: n&k OptiPrime-CD

The n&k OptiPrime-CD series are DUV-Vis-NIR scatterometers/thin film metrology systems, based on polarized reflectance measurements (Rs and Rp) from 190nm – 1000nm, with micro-spot technology. The systems in the OptiPrime-CD Series determine thickness, n and k spectra from 190nm – 1000nm of thin films, as well as depths, CDs, and profiles of trenches and contact holes.

Due to their ability to measure a large range of OCD and thin film structures that cover current and future applications, the tools belonging to the OptiPrime-CD Series are used extensively for power device and MEMS applications, as well as for the most challenging applications of today’s semiconductor industry.

The OptiPrime-CD Series is our “next-generation” DUV-Vis-NIR Scatterometer/Thin Film series. This series was launched in 2012, superseding the previous generation, 5000-CD and 1700-CD Series. Advancements in the optical design of the OptiPrime-CD Series provide a smaller micro-spot over the previous generation.

• Standard films such as SiOx, SiNx, Poly-Si, a-Si:H, SiCx, SiGex,
  a-C:H, TiNx, AlOx
• Polyresists, polymers, polyimides
• Thin metal films (less than ~ 800Å in general)
  • – Al
  • – CrSi
  • – Ta
  • – Ti
  • – W
  • – Cu
  • – Fe
  • – Au
  • – Ag
• High-k films
• Low-k films
• Chalcogenide films
• SOI
• Graphene
• Inhomogeneous films
• A variety of complex film stacks, including
  • – Multi-Layer Film Stacks with Inhomogeneous Under-Layer
  • – Multi-Layer Film Stacks with Unknown Under-Layer
• Ultra-Thin Films (down to a few Å), e.g., a Monolayer of Graphene
• Ultra-Thin Residual Layers
• Films Deposited on Rough Surfaces
• Films on Substrates Besides Silicon:
  • – For example: GaAs, SiC, AlTiC
• Films on rough surfaces
• Surface and interface roughness of thin films
• Energy Band Gap
• Compositon (e.g., %Ge in SiGex; %N, %H, %O in SiOxNx:H,
  %N in TiNx, etc.)
• Crystallinity (e.g., degree of crystallinity of Poly-Si or GST)

• Small (<100nm) pitch and large (>3μm) pitch trenches and contact
  holes structures
• Complex 2-D (trenches) and 3-D (contact holes) structures
  • – Profile
  • – Sidewall Oxide Thickness
  • – Underlayer Thicknesses
• Etch Monitor for Power Devices at All Process Steps
  • – Si Trench
  • – Poly Recess
  • – Contact Trench
• FinFET Structures
  • – Gate Height
  • – Gate CD
  • – Fin Height
  • – Fin Top CD
  • – Fin Bottom CD
  • – Oxide Thickness
  • – Dielectric Top Thickness
  • – Dielectric Bottom Thickness
  • – Dielectric Side Wall Thickness
• Si Trench with Oxide Cutback
• Detection of trench and contact hole issues:
  • – Collapsed trenches
  • – Under-etch
  • – Over Etch

In addition, the tools of the OptiPrime-CD Series measure films associatedwith OCD structures, including hard masks on trenches and contact holes and films at the bottom or lining of these structures.

Trench Array Capability Chart for the OptiPrime-CD Series

Contact Hole Array Capability Chart for the OptiPrime-CD Series

Due to their ability to measure a large range of OCD and thin film structures that cover current and future applications, the tools belonging to the OptiPrime-CD Series are used extensively for the most challenging applications of today’s semiconductor industry.