Semiconductor

The n&k EclipSE utilizes n&k’s patented optical design that combines single wavelength ellipsometry with polarized DUV-Vis-NIR reflectometry to determine the optical properties (n and k) and thicknesses of ultra-thin (less than a few nm) and thick films and multilayer film structures, plus depths, CDs, and profiles of complex trenches and holes.  The EclipSE is designed to meet the stringent accuracy, repeatability, and reproducibility of today’s advanced semiconductor fabrication facilities. This fully-automated system can be configured for various size wafers (12”, 8”, 6”).

On the software end, the Forouhi-Bloomer (F-B) Dispersion Equations describing the Refractive Index, n, and the Extinction Coefficient, k, as functions of wavelength, l, are used in the analysis of ellipsometry and reflectometry data to determine thicknesses and n and k spectra of thin films.  The F-B equations were derived based on first principles quantum mechanics and solid-state physics. The scientific derivations of the F-B model were originally published in 1986 and 1988, and are described in Wikipedia under “Refractive index and extinction coefficient of thin film materials”.  The F-B equations are combined with Rigorous Coupled Wave Analysis to determine depths, CDs, and profiles of trench and hole structures.

The n&k EclipSE measures offer the same thin film measurements of the n&k Opti-Prime Series.  For details, please refer to the description provided by the thin film measurements of the Opti-Prime Series.

However, with the inclusion of the ellipsometer, the EclipSE measures ultra-thin films, less than a few nanometers thick with extremely high accuracy, repeatability, and reproducibility.

The n&k EclipSE also provides compressive and tensile stress measurements, as well as waferless recipe generation.

The n&k EclipSE measures offer the same OCD measurements provided by the n&k Opti-Prime-CD.  For details, please refer to the description of the OCD measurements of the Opti-Prime-CD.